advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -40v lower on-resistance r ds(on) 38m fast switching characteristic i d -24a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice -55 to 150 thermal data parameter total power dissipation operating junction temperature range linear derating factor storage temperature range continuous drain current, v gs @ 10v -15 pulsed drain current 1 -80 35.7 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -40 + 16 -24 0.28 AP9565GEH/j rating rohs-compliant product maximum thermal resistance, junction-ambient (pcb mount) 3 200903094 1 g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9565gej) is available for low-profile applications. g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-12a - - 38 m ? v gs =-4.5v, i d =-8a - - 58 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-16a - 13 - s i dss drain-source leakage current v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 30 ua q g total gate charge 2 i d =-16a - 10 16 nc q gs gate-source charge v ds =-30v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-20v - 8 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 28 - ns t f fall time r d =20 -16- ns c iss input capacitance v gs =0v - 765 1230 pf c oss output capacitance v ds =-25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 6 9 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-16a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-16a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP9565GEH/j 3.surface mounted on 1 in 2 copper pad of fr4 board 2
AP9565GEH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3 0 20 40 60 80 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d = -16 a v g = -10v 0.0 5.0 10.0 15.0 20.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 20 40 60 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 20 40 60 80 100 120 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-8a t c =25 20.0 30.0 40.0 50.0 60.0 0 10203040 -i d , drain current (a) r ds(on) (m ? ) v gs =-4.5v v gs =-10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP9565GEH/j q v g -4.5v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 16 a v ds = - 30 v 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 10 20 30 40 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.0 0.0 0.0 0.1 0.2 duty=0. single pulse
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